Description
DESCRIPTION
PRODUCT SPECIFICATIONS Ultra-Flat SiNx Coated Substrates The Ultra-Flat SiNx Substrates consist of ultra-flat silicon wafers coated with 200nm of amorphous nonstoichiometric ultra-low-stress silicon nitride, similar to our silicon nitride grids. The ultra-flat SiNx substrates are available in 6″ wafer and conveniently diced 5 x 5mm, 5 x 7mm, and 10 x 10mm chips. The 6″ wafer is shipped in a 6″ wafer carrier; the diced pieces are shipped in a Gel-Pak® Box. The wafers are stealth diced, a special clean dicing process that produces debris-free substrates. All products are packed in class 10 clean room conditions. 21630-6 – 200nm SiNx on Ultra-Flat Silicon Wafer, in 6″ wafer carrier 21630-55 – 200nm SiNx on Ultra-Flat Silicon Wafer, 5 x 5mm pieces in a Gel-Pak® box 21630-57 – 200nm SiNx on Ultra-Flat Silicon Wafer, 5 x 7mm pieces in a Gel-Pak® box 21630-510 – 200nm SiNx on Ultra-Flat Silicon Wafer, 10 x 10mm pieces in a Gel-Pak® box Properties for thermal SiNx substrates: Material: CZ Virgin Silicon Wafer Grade: Prime Diameter: 150mm Orientation: Type/Dopant: P/Boron Resistivity: 10-20 Ohm-cm Thickness: 675 +/- 25µm TTV: ≤2µm Site Flatness: ≤1µm Warp: ≤30µm Bow: ≤20µm Front Surface: Polished Back Surface: Etched Flat: 1 per SEMI Standard 2000A +/- 100A SiNx
