Description
DESCRIPTION 21620-6 21620-55 21620-57 21620-510 200nm Thermal Oxide on ø6″ Ultra-Flat Wafer, Type , in 6″ wafer carrier 200nm Thermal Oxide on 5x5mm diced Ultra-Flat Wafer, Type , in Gel-Pak box 200nm Thermal Oxide on 5x7mm diced Ultra-Flat Wafer, Type , in Gel-Pak box 200nm Thermal Oxide on 10x10mm diced Ultra-Flat Wafer, Type , in Gel-Pak box each box/25 box/18 box/6 The Ultra-Flat SiO2 substrates consist of a 200nm thermally grown amorphous SiO2 film on an ultra-flat silicon wafer. SiO2 is one of the most characterized materials and is widely used in semiconductor manufacturing, thin film research and as substrate for growing cells. It can be directly used as substrate for AFM and SEM imaging. The ultra-flat thermal silicon dioxide substrates are available in 6″ wafer and conveniently diced 5x5mm, 5x7mm and 10x10mm chips. The 6″ wafer is shipped in a 6″ wafer carrier, the diced pieces are shipped in a Gel-Pak box. The special clean dicing process involves coating the wafer with photo resist before dicing and removing it after dicing which produces debris-free SiO2 substratres. All products are packed in class 10 clean room conditions. Properties for thermal SiO2 substrates: Orientation: Grade: Prime / CZ Virgin Resistance: 1-50 Ohm/cm Type: P / Dopant: Boron Wafer Thickness: 655-695 µm TTV: <= 7µm / STIR: <= 1.0µm Warp: <=40µm / Bow: <= 40µm Particles: = 3.0µm Front surface: Polished Back Surface: Etched Flat: 1 per SEMI Standard (flat length 57.5+/12.5mm) Film: 200nm +/- 5% Thermal Oxide (SiO2), amorphous Size: 6″ (150mm) diameter wafer or 5x5mm, 5x7mm or 10x10mm diced chips Roughness: Typical 2-3 Å
